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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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TPS2413DR Fiches technique(PDF) 10 Page - Texas Instruments |
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TPS2413DR Fiches technique(HTML) 10 Page - Texas Instruments |
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10 / 24 page  APPLICATION INFORMATION OVERVIEW Gate ON Gate OFF Programmable FastTurn-off Threshold Gnd Programmable FastTurn-off Threshold Active Regulation SlowTurn-off Range TPS2413 (SeeText) TPS2412 (SeeText) V +10V (A) V +V (A) (T) V(AC) V(AC) TPS2412 TPS2413 SLVS728B – JANUARY 2007 – REVISED SEPTEMBER 2008.......................................................................................................................................... www.ti.com The TPS2412/13 is designed to allow an output ORing in N+1 power supply applications (see Figure 12), and an input-power bus ORing in redundant source applications (see Figure 13). The TPS2412/13 and external MOSFET emulate a discrete diode to perform this unidirectional power combining function. The advantage to this emulation is lower forward voltage drop and the ability to tune the operation. The TPS2412 turns the MOSFET on with a linear control loop that regulates V(AC) to 10 mV as shown in Figure 11. With the gate low, and V(AC) increasing to 10 mV, the amplifier drives GATE high with all available output current until regulation is reached. The regulator controls V(GATE) to maintain V(AC) at 10 mV as long as the MOSFET rDS(on) × I(DRAIN) is less than this the regulated voltage. The regulator drives GATE high, turning the MOSFET fully ON when the rDS(on) × I(DRAIN) exceeds 10 mV; otherwise, V(GATE) will be near V(A) plus the MOSFET gate threshold voltage. If the external circuits force V(AC) below 10 mV and above the programmed fast turnoff, GATE is slowly turned off. GATE is rapidly pulled to ground if V(AC) falls to the RSET programmed fast turn-off threshold. The TPS2413 turns the MOSFET on and off like a comparator with hysteresis as shown in Figure 11. GATE is driven high when V(AC) exceeds 10 mV, and rapidly turned off if V(AC) falls to the RSET programmed fast turn-off threshold. System designs should account for the inherent delay between a TPS2412/13 circuit becoming forward biased, and the MOSFET actually turning ON. The delay is the result of the MOSFET gate capacitance charge from ground to its threshold voltage by the 290 µA gate current. If there are no additional sources holding the ORed rail voltage up, the MOSFET internal diode will conduct and maintain voltage on the ORed output, but there will be some voltage droop. This condition is analogous to the power source being ORed in this case. The DC/DC converter output voltage droops when its load increases from zero to a high value. Load sharing techniques that keep all ORed sources active solve this condition. Figure 11. TPS2412/13 Operation The operation of the two parts is summarized in Table 2. Table 2. Operation as a Function of VAC Turnoff Threshold(1) ≤ VAC ≤ 10 mV V(AC) ≤ Turnoff Threshold (1) V(AC) > 10 mV (MOSFET V(AC) Forced < 10 mV rDS(on) × ILOAD) ≤ 10 mV Weak GATE pull-down TPS2412 Strong GATE pull-down (OFF) V(AC) regulated to 10 mV GATE pulled high (ON) (OFF) TPS2413 Strong GATE pull-down (OFF) Depends on previous state (Hysteresis region) GATE pulled high (ON) (1) Turnoff threshold is established by the value of RSET. 10 Submit Documentation Feedback Copyright © 2007–2008, Texas Instruments Incorporated Product Folder Link(s): TPS2412 TPS2413 |
Numéro de pièce similaire - TPS2413DR |
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Description similaire - TPS2413DR |
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