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SI6963DQ Fiches technique(PDF) 1 Page - Fairchild Semiconductor

No de pièce SI6963DQ
Description  Dual P-Channel 2.5V Specified PowerTrench MOSFET
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

SI6963DQ Fiches technique(HTML) 1 Page - Fairchild Semiconductor

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April 2001
2001 Fairchild Semiconductor Corporation
Si6963DQ Rev. A (W)
Si6963DQ
Dual P-Channel 2.5V Specified PowerTrench
MOSFET
General Description
This P-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 12V).
Applications
• Load switch
• Motor drive
• DC/DC conversion
• Power management
Features
• –3.8 A, –20 V, R
DS(ON) = 0.043
Ω @ V
GS = –4.5 V
RDS(ON) = 0.070
Ω @ V
GS = –2.5 V
• Extended V
GSS range (
±12V) for battery applications
• Low gate charge
• High performance trench technology for extremely
low RDS(ON)
• Low profile TSSOP-8 package
D1
S1
S1
G1
D2
S2
S2
G2
TSSOP-8
Pin 1
8
7
6
5
1
2
3
4
Absolute Maximum Ratings
TA=25
oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
20
V
VGSS
Gate-Source Voltage
±12
V
ID
Drain Current
– Continuous
(Note 1)
3.8
A
– Pulsed
30
PD
Power Dissipation
(Note 1a)
1.0
W
(Note 1b)
0.6
TJ, TSTG
Operating and Storage Junction Temperature Range
55 to +150
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
125
°C/W
(Note 1b)
208
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
6963
Si6963DQ
13’’
12mm
3000 units


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