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SI3442BDV Fiches technique(PDF) 1 Page - Vishay Siliconix |
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SI3442BDV Fiches technique(HTML) 1 Page - Vishay Siliconix |
1 / 9 page Vishay Siliconix Si3442BDV Document Number: 72504 S09-2110-Rev. E, 12-Oct-09 www.vishay.com 1 N-Channel 2.5-V (G-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) RDS(on) (Ω)ID (A) 20 0.057 at VGS = 4.5 V 4.2 0.090 at VGS = 2.5 V 3.4 TSOP-6 Top View 6 4 1 2 3 5 2.85 mm 3 mm Ordering Information: Si3442BDV-T1-E3 (Lead (Pb)-free) Si3442BDV-T1-GE3 (Lead (Pb)-free and Halogen-free) Marking Code: 2Bxxx (1, 2, 5, 6) D (3) G (4) S N-Channel MOSFET Note: a. Surface Mounted on FR4 board, t ≤ 5 s. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5 s Steady State Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C) a TA = 25 °C ID 4.2 3.0 A TA = 70 °C 3.4 2.4 Pulsed Drain Current IDM 20 Continuous Source Current (Diode Conduction)a IS 1.4 0.72 Maximum Power Dissipationa TA = 25 °C PD 1.67 0.86 W TA = 70 °C 1.07 0.55 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta t ≤ 5 s RthJA 75 100 °C/W Steady State 120 145 Maximum Junction-to-Foot (Drain) Steady State RthJF 70 85 |
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