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SI6923DQ Fiches technique(PDF) 1 Page - Fairchild Semiconductor

No de pièce SI6923DQ
Description  P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

SI6923DQ Fiches technique(HTML) 1 Page - Fairchild Semiconductor

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April 2001
2001 Fairchild Semiconductor Corporation
Si6923DQ Rev. A(W)
Si6923DQ
P-Channel 2.5V Specified PowerTrench
MOSFET with Schottky Diode
General Description
This P-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process.
It is combined with a low
forward drop Schottky diode which is isolated from the
MOSFET, providing a compact power solution for
asynchronous DC/DC converter applications.
Applications
• DC/DC conversion
Features
• –3.5 A, –20 V. R
DS(ON) = 0.045
Ω @ V
GS = –4.5 V
RDS(ON) = 0.075
Ω @ V
GS = –2.5 V
• VF < 0.55 V @ 1 A
• High performance trench technology for extremely
low RDS(ON)
• Low profile TSSOP-8 package
D
S
S
G
C
A
A
A
TSSOP-8
Pin 1
4
3
2
1
5
6
7
8
MOSFET Absolute Maximum Ratings
TA=25
oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
20
V
VGSS
Gate-Source Voltage
± 12
V
ID
Drain Current
– Continuous
(Note 1)
3.5
A
– Pulsed
30
PD
MOSFET Power Dissipation (minimum pad)
(Note 1)
Schottky Power Dissipation (minimum pad)
(Note 1)
1.2
1.0
W
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Schottky Maximum Ratings
VRRM
Repetitive Peak Reverse Voltage
20
V
IF
Average Forward Current
1.5
A
IFM
Peak Forward Current
30
A
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(minimum pad)
(Note 1)
MOSFET: 115
Schottky: 130
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
6923
Si6923DQ
13’’
16mm
3000 units


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