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SI6923DQ Fiches technique(PDF) 1 Page - Fairchild Semiconductor |
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SI6923DQ Fiches technique(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page April 2001 2001 Fairchild Semiconductor Corporation Si6923DQ Rev. A(W) Si6923DQ P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode General Description This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It is combined with a low forward drop Schottky diode which is isolated from the MOSFET, providing a compact power solution for asynchronous DC/DC converter applications. Applications • DC/DC conversion Features • –3.5 A, –20 V. R DS(ON) = 0.045 Ω @ V GS = –4.5 V RDS(ON) = 0.075 Ω @ V GS = –2.5 V • VF < 0.55 V @ 1 A • High performance trench technology for extremely low RDS(ON) • Low profile TSSOP-8 package D S S G C A A A TSSOP-8 Pin 1 4 3 2 1 5 6 7 8 MOSFET Absolute Maximum Ratings TA=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage –20 V VGSS Gate-Source Voltage ± 12 V ID Drain Current – Continuous (Note 1) –3.5 A – Pulsed –30 PD MOSFET Power Dissipation (minimum pad) (Note 1) Schottky Power Dissipation (minimum pad) (Note 1) 1.2 1.0 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C Schottky Maximum Ratings VRRM Repetitive Peak Reverse Voltage 20 V IF Average Forward Current 1.5 A IFM Peak Forward Current 30 A Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (minimum pad) (Note 1) MOSFET: 115 Schottky: 130 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 6923 Si6923DQ 13’’ 16mm 3000 units |
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