SI6463DQ datasheet(3/5 Pages) FAIRCHILD

No de pièce	SI6463DQ

Description	P-Channel 2.5V Specified PowerTrench MOSFET

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Fabricant	FAIRCHILD [Fairchild Semiconductor]

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Si6463DQ Rev. A(W)

Typical Characteristics

0

5

10

15

20

25

30

00.5

1

1.5

-VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = -4.5V

-2.5V

-2.0V

-1.5V

-3.0V

0.8

1

1.2

1.4

1.6

1.8

2

0

6

12

18

24

30

-ID, DIRAIN CURRENT (A)

VGS = -2.0V

-3.0V

-3.5V

-4.0V

-4.5V

-2.5V

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

0.7

0.8

0.9

1

1.1

1.2

1.3

1.4

1.5

-50

-25

0

25

50

75

100

125

150

TJ, JUNCTION TEMPERATURE (

o

C)

ID = -8.8A

VGS = -4.5V

0.005

0.01

0.015

0.02

0.025

0.03

0.035

1.522.533.5

4

4.5

5

-VGS, GATE TO SOURCE VOLTAGE (V)

ID = -4.4A

TA = 125

oC

TA = 25

oC

Figure 3. On-Resistance Variation with

Temperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

0

10

20

30

40

50

0.5

1

1.5

2

2.5

-VGS, GATE TO SOURCE VOLTAGE (V)

TA = -55

oC

25

oC

125

oC

VDS = -5V

0.001

0.01

0.1

1

10

100

0

0.2

0.4

0.6

0.8

1

1.2

1.4

-VSD, BODY DIODE FORWARD VOLTAGE (V)

VGS = 0V

TA = 125

oC

25

oC

-55

oC

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

Numéro de pièce similaire - SI6463DQ

Fabricant	No de pièce	Fiches technique	Description
Vishay Siliconix	SI6463BDQ	46Kb / 5P	P-Channel 1.8-V (G-S) MOSFET Rev. A, 07-Oct-02
	SI6463BDQ	199Kb / 4P	P-Channel 1.8-V (G-S) MOSFET Rev. B, 12-Dec-05
	SI6463BDQ	199Kb / 4P	P-Channel 1.8-V (G-S) MOSFET Rev. B, 12-Dec-05

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