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SI6415DQ Fiches technique(PDF) 1 Page - Fairchild Semiconductor |
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SI6415DQ Fiches technique(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page September 2001 2001 Fairchild Semiconductor Corporation Si6415DQ Rev B(W) Si6415DQ 30V P-Channel PowerTrench MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (–4.5V – 20V). Applications • Battery protection • DC/DC conversion • Power management • Load switch Features • –6.5 A, –30 V R DS(ON) = 19 m Ω @ V GS = –10 V RDS(ON) = 30 m Ω @ V GS = –4.5 V • Extended V GSS range ( ±20V) for battery applications • High performance trench technology for extremely low RDS(ON) • Low profile TSSOP-8 package D S S G D S S D TSSOP-8 Pin 1 4 3 2 1 5 6 7 8 Absolute Maximum Ratings TA=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage –30 V VGSS Gate-Source Voltage ± 20 V ID Drain Current – Continuous (Note 1) –6.5 A – Pulsed –30 PD Power Dissipation (Note 1a) 1.3 W (Note 1b) 0.6 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 87 °C/W (Note 1b) 114 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 6415 Si6415DQ 13’’ 16mm 3000 units |
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