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TPS2231RGPTG4 Fiches technique(PDF) 3 Page - Texas Instruments |
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TPS2231RGPTG4 Fiches technique(HTML) 3 Page - Texas Instruments |
3 / 43 page TPS2231 TPS2236 www.ti.com.................................................................................................................................................. SLVS536J – JULY 2004 – REVISED SEPTEMBER 2009 DISSIPATION RATINGS (Thermal Resistance = °C/W) TA ≤ 25°C DERATING FACTOR TA = 70°C TA = 85°C PACKAGE POWER RATING ABOVE TA = 25°C POWER RATING POWER RATING PW (20)(1) 704.2 mW 7.41 mW/°C 370.6 mW 259.5 mW PWP (24)(1) 3153 mW 33.19 mW/°C 1659.5 mW 1161.6 mW RGP (20) (2) 3277.5 mW 34.5 mW/°C 1725 mW 1207.3 mW DAP (32) (1) 993.4 mW 10.46 mW/°C 522.8 mW 366 mW PowerPAD not soldered down DAP (32)(1) 4040.8 mW 42.55 mW/°C 2126.8 mW 1488.7 mW (1) These devices are mounted on an JEDEC low-k board (2-oz. traces on surface), (The table is assuming that the maximum junction temperature is 120°C). The power pad on the device must be soldered down to the power pad on the board if best thermal performance is needed. (2) This device is mounted on a JEDEC JESO51.5 high-k board (2 signal, 2 plane). The values assume a maximum junction temperature of 120°C. RECOMMENDED OPERATING CONDITIONS MIN MAX UNIT VI(3.3VIN) 3.3VIN is only required for its respective functions 3 3.6 VI(1.5VIN) Input voltage 1.5VIN is only required for its respective functions 1.35 1.65 V VI(AUXIN) AUXIN is required for all circuit operations 3 3.6 IO(3.3VOUT) 0 1.3 A IO(1.5VOUT) Continuous output current TJ = 120°C 0 650 mA IO(AUXOUT) 0 275 mA TJ Operating virtual junction temperature –40 120 °C ELECTRICAL CHARACTERISTICS TJ = 25°C, VI(3.3VIN) = VI(AUXIN) = 3.3 V, VI(1.5VIN) = 1.5 V, VI(/SHDNx), VI(/STBYx) = 3.3 V, VI(/CPPEx) = VI(/CPUSBx) = 0 V, VI(/SYSRST) = 3.3 V, OCx and RCLKENx and PERSTx are open, all voltage outputs unloaded (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT POWER SWITCH TJ = 25°C, I = 1300 mA each 45 3.3VIN to 3.3VOUT with two switches m Ω on for dual TJ = 100°C, I = 1300 mA each 68 TJ = 25°C, I = 650 mA each 46 Power switch 1.5VIN to 1.5VOUT With two switches m Ω resistance on for dual TJ = 100°C, I = 650 mA each 70 TJ = 25°C, I = 275 mA each 120 AUXIN to AUXOUT with two switches m Ω on for dual TJ = 100°C, I = 275 mA each 200 R(DIS_FET) Discharge resistance on 3.3V/1.5V/AUX outputs VI(/SHDNx) = 0 V, I(discharge) = 1 mA 100 500 Ω IOS(3.3VOUT) (steady-state value) 1.35 2 2.5 A Short-circuit IOS IOS(1.5VOUT) (steady-state value) TJ (–40, 120°C]. Output powered into a short 0.67 1 1.3 A output current(1) IOS(AUXOUT)(steady-state value) 275 450 600 mA Rising temperature, not in overcurrent condition 155 165 Trip point, TJ °C Thermal Overcurrent condition 120 130 shutdown Hysteresis 10 VO(3.3VOUT) with 100-mΩ short 43 100 VO(1.5VOUT) with 100-mΩ short, TPS2231 100 140 Current-limit From short to the 1st threshold within 1.1 μs response time times of final current limit, TJ = 25°C VO(1.5VOUT) with 100-mΩ short, TPS2236 110 150 VO(AUXOUT) with 100-mΩ short 38 100 (1) Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately. Copyright © 2004–2009, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Link(s): TPS2231 TPS2236 |
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