Moteur de recherche de fiches techniques de composants électroniques |
|
BC857BW Fiches technique(PDF) 3 Page - NXP Semiconductors |
|
BC857BW Fiches technique(HTML) 3 Page - NXP Semiconductors |
3 / 10 page 2002 Feb 04 3 NXP Semiconductors Product data sheet PNP general purpose transistors BC856W; BC857W; BC858W LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). Note 1. Refer to SOT323 standard mounting conditions. THERMAL CHARACTERISTICS Note 1. Refer to SOT323 standard mounting conditions. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BC856W − −80 V BC857W − −50 V BC858W − −30 V VCEO collector-emitter voltage open base BC856W − −65 V BC857W − −45 V BC858W − −30 V VEBO emitter-base voltage open collector − −5 V IC collector current (DC) − −100 mA ICM peak collector current − −200 mA IBM peak base current − −200 mA Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 200 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient in free air; note 1 625 K/W |
Numéro de pièce similaire - BC857BW |
|
Description similaire - BC857BW |
|
|
Lien URL |
Politique de confidentialité |
ALLDATASHEET.FR |
ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |