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IRFBG30PBF Fiches technique(PDF) 2 Page - Kersemi Electronic Co., Ltd. |
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IRFBG30PBF Fiches technique(HTML) 2 Page - Kersemi Electronic Co., Ltd. |
2 / 7 page 2 IRFBG30, SiHFBG30 Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA -62 °C/W Case-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC -1.0 SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 1000 - - V VDS Temperature Coefficient ΔV DS/TJ Reference to 25 °C, ID = 1 mA - 1.4 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 1000 V, VGS = 0 V - - 100 µA VDS = 800 V, VGS = 0 V, TJ = 125 °C - - 500 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 1.9 Ab -- 5.0 Ω Forward Transconductance gfs VDS = 10 V, ID = 1.9 Ab 2.1 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 980 - pF Output Capacitance Coss - 140 - Reverse Transfer Capacitance Crss -50 - Total Gate Charge Qg VGS = 10 V ID = 3.1 A, VDS =400 V, see fig. 6 and 13b -- 80 nC Gate-Source Charge Qgs -- 10 Gate-Drain Charge Qgd -- 42 Turn-On Delay Time td(on) VDD = 500 V, ID = 3.1 A RG = 12 Ω, RD = 170 Ω, see fig. 10b -12 - ns Rise Time tr -25 - Turn-Off Delay Time td(off) -89 - Fall Time tf -29 - Internal Drain Inductance LD Between lead, 6 mm (0.25") from package and center of die contact -4.5 - nH Internal Source Inductance LS -7.5 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- 3.1 A Pulsed Diode Forward Currenta ISM -- 12 Body Diode Voltage VSD TJ = 25 °C, IS = 3.1 A, VGS = 0 Vb -- 1.8 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 3.1 A, dI/dt = 100 A/µsb - 410 620 ns Body Diode Reverse Recovery Charge Qrr - 1.3 2.0 µC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) D S G S D G www.kersemi.com |
Numéro de pièce similaire - IRFBG30PBF |
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Description similaire - IRFBG30PBF |
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