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IRFB18N50K Fiches technique(PDF) 1 Page - Kersemi Electronic Co., Ltd. |
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IRFB18N50K Fiches technique(HTML) 1 Page - Kersemi Electronic Co., Ltd. |
1 / 7 page 1 Power MOSFET IRFB18N50K, SiHFB18N50K FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current •Low RDS(on) • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply • High Speed Power Switching • Hard Switched and High Frequency Circuits Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. Starting TJ = 25 °C, L = 2.5 mH, RG = 25 Ω, IAS = 17 A. c. ISD ≤ 17 A, dI/dt ≤ 376 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. PRODUCT SUMMARY VDS (V) 500 RDS(on) (Ω)VGS = 10 V 0.26 Qg (Max.) (nC) 120 Qgs (nC) 34 Qgd (nC) 54 Configuration Single N-Channel MOSFET G D S TO-220 G D S Available RoHS* COMPLIANT ORDERING INFORMATION Package TO-220 Lead (Pb)-free IRFB18N50KPbF SiHFB18N50K-E3 SnPb IRFB18N50K SiHFB18N50K ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ± 30 Continuous Drain Current VGS at 10 V TC = 25 °C ID 17 A TC = 100 °C 11 Pulsed Drain Currenta IDM 68 Linear Derating Factor 1.8 W/°C Single Pulse Avalanche Energyb EAS 370 mJ Repetitive Avalanche Currenta IAR 17 A Repetitive Avalanche Energya EAR 22 mJ Maximum Power Dissipation TC = 25 °C PD 220 W Peak Diode Recovery dV/dtc dV/dt 7.8 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300d Mounting Torque 6-32 or M3 screw 10 N * Pb containing terminations are not RoHS compliant, exemptions may apply www.kersemi.com |
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Description similaire - IRFB18N50K |
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