Moteur de recherche de fiches techniques de composants électroniques |
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2SK2865 Fiches technique(PDF) 2 Page - Kersemi Electronic Co., Ltd. |
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2SK2865 Fiches technique(HTML) 2 Page - Kersemi Electronic Co., Ltd. |
2 / 5 page 2SK2865 2 Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±25 V, VDS = 0 V — — ±10 μA Gate−source breakdown voltage V (BR) GSS IG = ±10 μA, VDS = 0 V ±30 — — V Drain cutoff current IDSS VDS = 600 V, VGS = 0 V — — 100 μA Drain−source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 600 — — V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.0 — 4.0 V Drain−source ON-resistance RDS (ON) VGS = 10 V, ID = 1 A — 4.2 5.0 Ω Forward transfer admittance |Yfs| VDS = 10 V, ID = 1 A 0.8 1.7 — S Input capacitance Ciss — 380 — Reverse transfer capacitance Crss — 40 — Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz — 120 — pF Rise time tr — 15 — Turn−on time ton — 25 — Fall time tf — 20 — Switching time Turn−off time toff — 80 — ns Total gate charge (gate−source plus gate−drain) Qg — 9 — Gate−source charge Qgs — 5 — Gate−drain (“Miller”) charge Qgd VDD ≈ 480 V, VGS = 10 V, ID = 2 A — 4 — nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR — — — 2 A IDRP t = 1 ms — — 5 A Pulse drain reverse current (Note 1) IDRP t = 100 μs — — 8 A Forward voltage (diode) VDSF IDR = 2 A, VGS = 0 V — — −1.5 V Reverse recovery time trr — 1000 — ns Reverse recovery charge Qrr IDR = 2 A, VGS = 0 V dIDR / dt = 100 A / μs — 3.5 — μC Marking K2865 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code) |
Numéro de pièce similaire - 2SK2865 |
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Description similaire - 2SK2865 |
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