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2SD1624T-TD-H Fiches technique(PDF) 2 Page - ON Semiconductor

No de pièce 2SD1624T-TD-H
Description  Bipolar Transistor -50V, -3A, Low VCEsat, PNP,NPN Single PCP
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Fabricant  ONSEMI [ON Semiconductor]
Site Internet  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

2SD1624T-TD-H Fiches technique(HTML) 2 Page - ON Semiconductor

  2SD1624T-TD-H Datasheet HTML 1Page - ON Semiconductor 2SD1624T-TD-H Datasheet HTML 2Page - ON Semiconductor 2SD1624T-TD-H Datasheet HTML 3Page - ON Semiconductor 2SD1624T-TD-H Datasheet HTML 4Page - ON Semiconductor 2SD1624T-TD-H Datasheet HTML 5Page - ON Semiconductor 2SD1624T-TD-H Datasheet HTML 6Page - ON Semiconductor 2SD1624T-TD-H Datasheet HTML 7Page - ON Semiconductor  
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2SB1124 / 2SD1624
No.2019-2/7
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
Unit
Collector Dissipation
PC
500
mW
When mounted on ceramic substrate (250mm2×0.8mm)
1.5
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Collector Cutoff Current
ICBO
VCB=(--)40V, IE=0A
(--)1
μA
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0A
(--)1
μA
DC Current Gain
hFE1VCE=(--)2V, IC=(--)100mA
100*
560*
hFE2VCE=(--)2V, IC=(--)3A
35
Gain-Bandwidth Product
fT
VCE=(--)10V, IC=(--)50mA
150
MHz
Output Capacitance
Cob
VCB=(--)10V, f=1MHz
(39)25
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=(--)2A, IB=(--)100mA
(--0.35)0.19
(--0.7)0.5
V
Base-to-Emitter Saturation Voltage
VBE(sat)
VCE=(--)2A, IC=(--)100mA
(--)0.94
(--)1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=(--)10μA, IE=0A
(--)60
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=(--)1mA, RBE=∞
(--)50
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=(--)10μA, IC=0A
(--)6
V
Turn-ON Time
ton
See specified Test Circuit.
(70)70
ns
Storage Time
tstg
(450)650
ns
Fall Time
tf
(35)35
ns
* ; The 2SB1124/2SD1624 are classified by 100mA hFE as follows :
Rank
R
S
T
U
hFE
100 to 200
140 to 280
200 to 400
280 to 560
Switching Time Test Circuit
Ordering Information
Device
Package
Shipping
memo
2SB1124S-TD-E
PCP
1,00pcs./reel
Pb Free
2SB1124S-TD-H
PCP
1,00pcs./reel
Pb Free and Halogen Free
2SB1124T-TD-E
PCP
1,00pcs./reel
Pb Free
2SB1124T-TD-H
PCP
1,00pcs./reel
Pb Free and Halogen Free
2SD1624S-TD-E
PCP
1,00pcs./reel
Pb Free
2SD1624S-TD-H
PCP
1,00pcs./reel
Pb Free and Halogen Free
2SD1624T-TD-E
PCP
1,00pcs./reel
Pb Free
2SD1624T-TD-H
PCP
1,00pcs./reel
Pb Free and Halogen Free
VR
RB
25V
--5V
+
+
50Ω
INPUT
OUTPUT
25Ω
100μF
470μF
PW=20μs
IC=10IB1= --10IB2=1A
For PNP, the polarity is reversed.
IB1
D.C.≤1%
IB2
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.


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