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FQD17P06 Fiches technique(PDF) 2 Page - Fairchild Semiconductor

No de pièce FQD17P06
Description  P-Channel QFET MOSFET
Download  9 Pages
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQD17P06 Fiches technique(HTML) 2 Page - Fairchild Semiconductor

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©2001 Fairchild Semiconductor Corporation
2
www.fairchildsemi.com
FQD17P06/ FQU17P06 Rev.C0
Elerical Characteristics
TC = 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 2.4mH, IAS = -12A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ -17 A, di/dt ≤ 300A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Essentially independent of operating temperature
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 μA
-60
--
--
V
ΔBVDSS
/
ΔTJ
Breakdown Voltage Temperature Coefficient
ID = -250 μA, Referenced to 25°C
--
-0.06
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = -60 V, VGS = 0 V
--
--
-1
μA
VDS = -48 V, TC = 125°C
--
--
-10
μA
IGSSF
Gate-Body Leakage Current, Forward
VGS = -25 V, VDS = 0 V
--
--
-100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = 25 V, VDS = 0 V
--
--
100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = -250 μA
-2.0
--
-4.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = -10 V, ID = -6.0 A
--
0.11
0.135
Ω
gFS
Forward Transconductance
VDS = -30 V, ID = -6.0 A
--
8.7
--
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
--
690
900
pF
Coss
Output Capacitance
--
325
420
pF
Crss
Reverse Transfer Capacitance
--
80
105
pF
Switching Characteristics
td(on)
Turn-On Delay Time
VDD = -30 V, ID = -8.5 A,
RG = 25 Ω
--
13
35
ns
tr
Turn-On Rise Time
--
100
210
ns
td(off)
Turn-Off Delay Time
--
22
55
ns
tf
Turn-Off Fall Time
--
60
130
ns
Qg
Total Gate Charge
VDS = -48 V, ID = -17 A,
VGS = -10 V
--
21
27
nC
Qgs
Gate-Source Charge
--
4.2
--
nC
Qgd
Gate-Drain Charge
--
10
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
-12
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
-48
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = -12 A
--
--
-4.0
V
trr
Reverse Recovery Time
VGS = 0 V, IS = -17 A,
dIF / dt = 100 A/μs
--
92
--
ns
Qrr
Reverse Recovery Charge
--
0.32
--
μC
(Note 4)
(Note 4)


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