2N1132L datasheet(1/3 Pages) MICROSEMI

No de pièce	2N1132L

Description	LOW POWER PNP SILICONTRANSISTOR

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Fabricant	MICROSEMI [Microsemi Corporation]

Site Internet	http://www.microsemi.com

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TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

Gort Road Business Park, Ennis, Co. Clare, Ireland

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

Website: http: //www.microsemi.com

LOW POWER PNP SILICONTRANSISTOR

Qualified per MIL-PRF-19500/177

T4-LDS-0187 Rev. 1 (101882)

Page 1 of 3

DEVICES

LEVELS

2N1131

2N1132

JAN

2N1131L

2N1132L

JANTX

JANTXV

ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)

Parameters / Test Conditions

Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

40

Vdc

Collector-Base Voltage

VCBO

50

Vdc

Emitter-Base Voltage

VEBO

5.0

Vdc

Collector Current

IC

600

mAdc

Total Power Dissipation

@ TA = +25°C

(1)

@ TC = +25°C

(2)

PT

0.6

2.0

W

Operating & Storage Junction Temperature Range

TJ, Tstg

-65 to +200

°C

NOTES:

1/ Derate linearly 3.43mW/°C for TA > +25°C

2/ Derate linearly 11.4mW/°C for TC > +25°C

ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

OFF CHARACTERTICS

Collector-Emitter Breakdown Voltage

V(BR)CEO

Vdc

IC = 10mAdc

40

Collector- Base Breakdown Voltage

V(BR)CBO

Vdc

IC = 10µAdc

50

Emitter-Base Cutoff Current

IEBO

VEB = 5.0Vdc

100

µAdc

Collector-Emitter Cutoff Current

ICER

mAdc

VCE = 50Vdc, RBE ≤ 10 ohms

10

Collector-Base Cutoff Current

ICBO

VCB = 50Vdc

VCB = 30Vdc

10

1.0

µAdc

TO-39

2N1131, 2N1132

TO-5

2N1131L, 2N1132L

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