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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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IRF7811A Fiches technique(PDF) 1 Page - International Rectifier |
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IRF7811A Fiches technique(HTML) 1 Page - International Rectifier |
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1 / 4 page  www.irf.com 1 IRF7809A/IRF7811A Parameter Symbol IRF7809A IRF7811A Units Drain-Source Voltage V DS 30 28 V Gate-Source Voltage V GS ±12 Continuous Drain or Source T A = 25°C I D 14.5 11.4 Current (V GS ≥ 4.5V) T L = 90°C 14.2 11.2 A Pulsed Drain Current I DM 100 100 Power Dissipation T A = 25°C P D 2.5 W T L = 90°C 2.4 Junction & Storage Temperature Range T J, TSTG –55 to 150 °C Continuous Source Current (Body Diode) I S 2.5 2.5 A Pulsed Source Current I SM 50 50 • N-Channel Application-Specific MOSFETs • Ideal for CPU Core DC-DC Converters • Low Conduction Losses • Low Switching Losses • Minimizes Parallel MOSFETs for high current applications Description These new devices employ advanced HEXFET® Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge.The reduced conduction and switching losses make them ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. Both the IRF7809A and IRF7811A have been optimized and are 100% tested for all parameters that are critical in synchronous buck converters including R DS(on), gate charge and Cdv/dt-induced turn-on immunity.The IRF7809A offers particulary low R DS(on) and high Cdv/dt immunity for synchronous FET applications. The IRF7811A offers an extremely low combination of Q sw & RDS(on) for reduced losses in control FET applications. The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 2W is possible in a typical PCB mount application. HEXFET® Chipset for DC-DC Converters IRF7809A IRF7811A V DS 30V 28V R DS(on) 8.5 m Ω 12 m Ω Q G 73 nC 23 nC Q sw 22.5 nC 7 nC Q oss 30 nC 31 nC Absolute Maximum Ratings Parameter Max. Units Maximum Junction-to-Ambient Rθ JA 50 °C/W Maximum Junction-to-Lead Rθ JL 25 °C/W Thermal Resistance DEVICE RATINGS To p V ie w 8 1 2 3 4 5 6 7 D D D D G S A S S A IRF7809A/IRF7811A SO-8 01/19/00 PROVISIONAL DATASHEET PD - 93810 PD - 93811 |
Numéro de pièce similaire - IRF7811A |
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Description similaire - IRF7811A |
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