BC640BU datasheet(1/5 Pages) FAIRCHILD

No de pièce	BC640BU

Description	PNP Epitaxial Silicon Transistor

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Fabricant	FAIRCHILD [Fairchild Semiconductor]

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BC640 Rev. C3

1

March 2009

BC640

PNP Epitaxial Silicon Transistor

Switching and Amplifier Applications

• Complement to BC639

Absolute Maximum Ratings T

a = 25°C unless otherwise noted

Electrical Characteristics T

a = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

VCER

Collector-Emitter Voltage at RBE=1KΩ

-100

V

VCES

Collector-Emitter Voltage

-100

V

VCEO

Collector-Emitter Voltage

-80

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current

-1

A

ICP

Peak Collector Current

-1.5

A

IB

Base Current

-100

mA

PC

Collector Power Dissipation

1

W

TJ

Junction Temperature

150

°C

TSTG

Storage Temperature

-65 ~ 150

°C

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

BVCEO

Collector-Emitter Breakdown Voltage

IC= -10mA, IB=0

-80

V

ICBO

Collector Cut-off Current

VCB= -30V, IE=0

-0.1

μA

IEBO

Emitter Cut-off Current

VEB= -5V, IC=0

-10

μA

hFE1

hFE2

hFE3

DC Current Gain

VCE= -2V, IC= -5mA

VCE= -2V, IC= -150mA

VCE= -2V, IC= -500mA

25

40

25

160

VCE (sat)

Collector-Emitter Saturation Voltage

IC= -500mA, IB= -50mA

-0.5

V

VBE (on)

Base-Emitter On Voltage

VCE= -2V, IC= -500mA

-1

V

fT

Current Gain Bandwidth Product

VCE= -5V, IC= -10mA,

f=50MHz

100

MHz

1. Emitter 2. Collector 3. Base

TO-92

1

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