SI2315BDS datasheet(1/9 Pages) VISHAY

No de pièce	SI2315BDS

Description	P-Channel 1.8-V (G-S) MOSFET

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Vishay Siliconix

Si2315BDS

Document Number: 72014

S-80642-Rev. E, 24-Mar-08

www.vishay.com

1

P-Channel 1.8-V (G-S) MOSFET

FEATURES

•

Halogen-free Option Available

• TrenchFET® Power MOSFETs: 1.8 V Rated

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)ID (A)

- 12

0.050 at VGS = - 4.5 V

- 3.85

0.065 at VGS = - 2.5 V

- 3.4

0.100 at VGS = - 1.8V

- 2.7

Ordering Information: Si2315BDS-T1

Si2315BDS-T1-E3 (Lead (Pb)-free)

Si2315BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)

G

S

D

Top View

2

3

TO-236

(SOT-23)

1

Si2315BDS *(M5)

* Marking Code

Notes:

a. Surface Mounted on FR4 board.

b. t

≤ 5 s.

For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm.

* Pb containing terminations are not RoHS compliant, exemptions may apply.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

5 s

Steady State

Unit

Drain-Source Voltage

VDS

- 12

V

Gate-Source Voltage

VGS

± 8

Continuous Drain Current (TJ = 150 °C)

a

TA = 25 °C

ID

- 3.85

- 3.0

A

TA = 70 °C

- 3.0

- 2.45

Pulsed Drain Currenta

IDM

- 12

Continuous Source Current (Diode Conduction)a

IS

- 1.0

- 0.62

Power Dissipationa

TA = 25 °C

PD

1.19

0.75

W

TA = 70 °C

0.76

0.48

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typ.

Max.

Unit

Maximum Junction-to-Ambienta

t

≤ 5 s

RthJA

85

105

°C/W

Steady State

130

166

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

60

75

Available

Pb-free

RoHS*

COMPLIANT

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