IRF630PBF datasheet(6/8 Pages) KERSEMI

No de pièce	IRF630PBF

Description	Power MOSFET Dynamic dV/dt Rating Repetitive Avalanche Rated

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Fabricant	KERSEMI [Kersemi Electronic Co., Ltd.]

Site Internet	http://www.kersemi.com

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6 / 8 page

IRF630, SiHF630

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Fig. 13a - Basic Gate Charge Waveform

Fig. 13b - Gate Charge Test Circuit

600

0

100

200

300

400

500

25

150

125

100

75

50

Starting TJ, Junction Temperature (°C)

Bottom

Top

I

D

4.0 A

5.7 A

9.0 A

V

DD = 50 V

91031_12c

Q

GS

Q

GD

Q

G

VG

Charge

10 V

D.U.T.

3 mA

V

GS

V

DS

I

G

I

D

0.3 µF

0.2 µF

50 k

Ω

12 V

Current regulator

Current sampling resistors

Same type as D.U.T.

+

-

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Numéro de pièce similaire - IRF630PBF

Fabricant	No de pièce	Fiches technique	Description
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VBsemi Electronics Co.,...	IRF630PBF	1Mb / 6P	N-Channel 200 V (D-S) MOSFET

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IRF630PBF Fiches technique(PDF) 6 Page - Kersemi Electronic Co., Ltd.

IRF630PBF Fiches technique(HTML) 6 Page - Kersemi Electronic Co., Ltd.

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