STP18N55M5 datasheet(5/22 Pages) STMICROELECTRONICS

No de pièce	STP18N55M5

Description	N-channel 550 V, 0.18 廓, 13 A, MDmesh??V Power MOSFET in D짼PAK, DPAK, TO-220FP and TO-220

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STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5

Electrical characteristics

Doc ID 17078 Rev 2

5/22

Table 6.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

td(off)

tr

tc

tf

Turn-off delay time

Rise time

Cross time

Fall time

VDD = 400 V, ID = 9 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 18, Figure 23)

-

29

9.5

23

13

-

ns

Table 7.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

ISDM

(1)

1.

Pulse width limited by safe operating area

Source-drain current

Source-drain current (pulsed)

-

13

52

A

VSD

(2)

2.

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD = 13 A, VGS = 0

-

1.5

V

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 13 A, di/dt = 100 A/µs

VDD = 100 V (see Figure 20)

-

238

2.8

23.5

ns

µC

A

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 13 A, di/dt = 100 A/µs

VDD = 100 V, Tj = 150 °C

(see Figure 20)

-

278

3.3

24

ns

µC

A

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