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AD7880BN Fiches technique(PDF) 3 Page - Analog Devices |
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AD7880BN Fiches technique(HTML) 3 Page - Analog Devices |
3 / 16 page AD7880 REV. 0 –3– TIMING CHARACTERISTICS1 Limit at +25 C Limit at TMIN, TMAX Parameter (All Versions) (All Versions) Units Conditions/Comments t1 50 50 ns min CONVST Pulse Width t2 130 130 ns min CONVST to BUSY Falling Edge t3 0 0 ns min BUSY to CS Setup Time t4 0 0 ns min CS to RD Setup Time t5 0 0 ns min CS to RD Hold Time t6 60 75 ns min RD Pulse Width t7 2 57 70 ns max Data Access Time after RD t8 3 55 ns min Bus Relinquish Time after RD 50 50 ns max NOTES 1Timing specifications in bold print are 100% production tested. All other times are sample tested at +25 °C to ensure compliance. All input signals are specified with tr = tf = 5 ns (10% to 90% of 5 V) and timed from a voltage level of 1.6 V. 2t 7 is measured with the load circuit of Figure 2 and defined as the time required for an output to cross 0.8 V or 2.4 V. 3t 8 is derived from the measured time taken by the data outputs to change by 0.5 V when loaded with the circuit of Figure 2. The measured number is then extrapo- lated back to remove the effects of charging the 50 pF capacitor. This means that the time, t 8, quoted in the timing characteristics is the true bus relinquish time of the part and as such is independent of external bus loading capacitances. (VDD = +5 V 5%, VREF = VDD, AGND = DGND = 0 V) Table I. Truth Table CS CONVST RD Function 1 1 X Not Selected 1 j 1 Start Conversion g 0 1 0 Enable ADC Data 0 1 1 Data Bus Three Stated ABSOLUTE MAXIMUM RATINGS* VDD to AGND . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V VDD to DGND . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V AGND to DGND . . . . . . . . . . . . . . . . . –0.3 V to VDD + 0.3 V VINA, VINB to AGND (Figure 5) . . . . . . –0.3 V to VDD + 0.3 V VINA to AGND (Figure 6) . . . . . . . . . –0.6 V to 2 VDD + 0.6 V VINA to AGND (Figure 7) . . . . . –VDD – 0.3 V to VDD + 0.3 V VREF to AGND . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3 V to VDD Digital Inputs to DGND . . . . . . . . . . . –0.3 V to VDD + 0.3 V Digital Outputs to DGND . . . . . . . . . . –0.3 V to VDD + 0.3 V Operating Temperature Range Industrial (B, C Versions) . . . . . . . . . . . . . –40 °C to +85°C Storage Temperature Range . . . . . . . . . . . –65 °C to +150°C Lead Temperature (Soldering, 10 secs) . . . . . . . . . . . . +300 °C Power Dissipation (Any Package) to +75 °C . . . . . . . . 450 mW Derates above +75 °C by . . . . . . . . . . . . . . . . . . . . . 10 mW/°C *Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. WARNING! ESD SENSITIVE DEVICE CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD7880 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. DB0 – DB11 DATA VALID t 1 t CONVERT t 2 t 3 t 4 t 5 t 6 t 7 t 8 CONVST BUSY CS RD THREE-STATE TRACK/HOLD GOES INTO HOLD Figure 1. Timing Diagram TO OUTPUT PIN 1.6mA 2.1V + 200µA 50pF Figure 2. Load Circuit for Access and Relinquish Time |
Numéro de pièce similaire - AD7880BN |
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Description similaire - AD7880BN |
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