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SI3401-X-GM Fiches technique(PDF) 7 Page - Silicon Laboratories

No de pièce SI3401-X-GM
Description  Support non-isolated and isolated switching topologies Comprehensive protection circuitry
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Fabricant  SILABS [Silicon Laboratories]
Site Internet  http://www.silabs.com
Logo SILABS - Silicon Laboratories

SI3401-X-GM Fiches technique(HTML) 7 Page - Silicon Laboratories

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Si3400/Si3401
Rev. 0.9
7
VDD accuracy @ 0.8 mA
36 V < VPORT < 57 V
4.5
5.5
V
Softstart charging current
12
µA
Thermal Shutdown
Junction temperature
160
ºC
Thermal Shutdown Hysteresis
25
ºC
Table 5. Total Power Dissipation
Description
Condition
Min
Typ
Max
Units
Power Dissipation
VPORT = 50 V, VOUT =5V, 2A
1.2
W
Power Dissipation*
VPORT = 50 V, VOUT = 5 V, 2 A w/ diode
bridges bypassed
—0.7
W
*Note: Silicon Laboratories recommends the on-chip diode bridges be bypassed when output power requirements are >10 W
(Si3401) or in thermally-constrained applications. For more information, see “AN313: Using the Si3400 and Si3401 in
High Power Applications”.
Table 6. Package Thermal Characteristics
Parameter
Symbol
Test Condition
Typ
Units
Thermal resistance
(junction to ambient)
θJA
Still air; assumes a minimum of
nine thermal vias are connected
to a 2 in2 heat spreader plane for
the package “pad” node
(VNEG).
44
°C/W
Table 4. Electrical Characteristics (Continued)
Parameter
Description
Min
Typ
Max
Unit
Notes:
1. Transient surge defined in IEC60060 as a 1000 V impulse of either polarity applied to CT1–CT2 or SP1–SP2. The
shape of the impulse shall have a 300 ns full rise time and a 50 µs half fall time with 201
Ω source impedance.
2. The classification currents are guaranteed only when recommended RCLASS resistors are used, as specified in
Table 10.
3. IPORT includes full operating current of switching regulator controller.
4. The PD interface includes dual-level input current limit. At turn-on, before the HSO load capacitor is charged, the
current limit is set at the inrush level. After the capacitor has been charged within ~1.25 V of VNEG, the operating
current limit is engaged. This higher current limit remains active until the UVLO lower limit has been tripped or until the
hotswap switch is sufficiently current-limited to cause a foldback of the HSO voltage.
5. See “AN296: Using the Si3400/01 PoE PD Controller in Isolated and Non-Isolated Designs” for more information.
6. Applies to non-isolated applications only (VOUT on schematic in Figure 1).


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