IRFB3006GPBF datasheet(7/8 Pages) IRF

No de pièce	IRFB3006GPBF

Description	High Efficiency Synchronous Rectification in SMPS

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Fabricant	IRF [International Rectifier]

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IRFB3006GPbF

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Fig 23a. Switching Time Test Circuit

Fig 23b. Switching Time Waveforms

Fig 22b. Unclamped Inductive Waveforms

Fig 22a. Unclamped Inductive Test Circuit

tp

V(BR)DSS

IAS

RG

IAS

0.01

Ω

tp

D.U.T

L

VDS

+

- VDD

DRIVER

A

15V

20V

VGS

Fig 24a. Gate Charge Test Circuit

Fig 24b. Gate Charge Waveform

Vds

Vgs

Id

Vgs(th)

Qgs1 Qgs2

Qgd

Qgodr

Fig 21.

Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET® Power MOSFETs

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

P.W.

Period

di/dt

Diode Recovery

dv/dt

Ripple

≤ 5%

Body Diode

Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

VGS=10V

VDD

ISD

Driver Gate Drive

D.U.T. ISD Waveform

D.U.T. VDS Waveform

Inductor Curent

D =

P.W.

Period

* VGS = 5V for Logic Level Devices

*

+

-

+

-

RG

VDD

• dv/dt controlled by RG

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

D.U.T

Inductor Current

D.U.T.

VDS

ID

IG

3mA

VGS

.3

µF

50K

Ω

.2

µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

+

-

VDS

90%

10%

VGS

td(on)

tr

td(off) tf

VDS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

RD

VGS

RG

D.U.T.

10V

+

- VDD

VGS

Numéro de pièce similaire - IRFB3006GPBF

Fabricant	No de pièce	Fiches technique	Description
Inchange Semiconductor ...	IRFB3006	339Kb / 2P	N-Channel MOSFET Transistor
International Rectifier	IRFB3006PBF	302Kb / 8P	HEXFETPower MOSFET
	IRFB3006PBF	251Kb / 9P	Hard Switched and High Frequency Circuits
	IRFB3006PBF	251Kb / 9P	Hard Switched and High Frequency Circuits

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