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STP9NK65Z Fiches technique(PDF) 1 Page - STMicroelectronics |
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STP9NK65Z Fiches technique(HTML) 1 Page - STMicroelectronics |
1 / 15 page December 2007 Rev 3 1/15 15 STP9NK65Z STP9NK65ZFP N-channel 650 V - 1 Ω - 6.4 A TO-220 / TO-220FP Zener-protected SuperMESH™ Power MOSFET Features ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability Application ■ Switching applications Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. Figure 1. Internal schematic diagram Type VDSS RDS(on) ID Pw STP9NK65ZFP 650 V < 1.2 Ω 6.4 A 125 W STP9NK65Z 650 V < 1.2 Ω 6.4 A 30 W 1 2 3 1 2 3 TO-220 TO-220FP Table 1. Device summary Order codes Marking Package Packaging STP9NK65ZFP P9NK65ZFP TO-220FP Tube STP9NK65Z P9NK65Z TO-220 Tube www.st.com |
Numéro de pièce similaire - STP9NK65Z_07 |
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Description similaire - STP9NK65Z_07 |
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