KSB1151 datasheet(1/5 Pages) FAIRCHILD

No de pièce	KSB1151

Description	Low Collector-Emitter Saturation Voltage Large Collector Current

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Fabricant	FAIRCHILD [Fairchild Semiconductor]

Site Internet	http://www.fairchildsemi.com

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Rev. B, May 2003

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings T

C=25°C unless otherwise noted

* PW

≤10ms, Duty Cycle≤50%

Electrical Characteristics T

C=25°C unless otherwise noted

* Pulse test: PW

≤350µs, Duty Cycle≤2% Pulsed

hFE Classification

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

- 60

V

VCEO

Collector-Emitter Voltage

- 60

V

VEBO

Emitter-Base Voltage

- 7

V

IC

Collector Current (DC)

- 5

A

ICP

*Collector Current (Pulse)

- 8

A

IB

Base Current

- 1

A

PC

Collector Dissipation (Ta=25°C)

1.3

W

Collector Dissipation (TC=25°C)

20

W

TJ

Junction Temperature

150

°C

TSTG

Storage Temperature

- 55 ~ 150

°C

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

ICBO

Collector Cut-off Current

VCB = - 50V, IE = 0

- 10

µA

IEBO

Emitter Cut-off Current

VEB = - 7V, IC = 0

- 10

µA

hFE1

hFE2

hFE3

* DC Current Gain

VCE = - 1V, IC = - 0.1A

VCE = - 1V, IC = - 2A

VCE = - 2V, IC = - 5A

60

100

50

200

400

VCE(sat)

* Collector-Emitter Saturation Voltage

IC = - 2A, IB = - 0.2A

- 0.14

- 0.3

V

VBE(sat)

* Base-Emitter Saturation Voltage

IC = - 2A, IB = - 0.2A

- 0.9

- 1.2

V

tON

Turn On Time

VCC = - 10V, IC = - 2A

IB1 = - IB2 =0.2A

RL = 5

Ω

0.15

1

µs

tSTG

Storage Time

0.78

2.5

µs

tF

Fall Time

0.18

1

µs

Classification

O

Y

G

hFE2

100 ~ 200

160 ~ 320

200 ~ 400

KSB1151

Feature

• Low Collector-Emitter Saturation Voltage

• Large Collector Current

• High Power Dissipation : PC=1.3W (Ta=25°C)

• Complement to KSD 1691

1

TO-126

1. Emitter

2.Collector

3.Base

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Samsung semiconductor	KSB1151	160Kb / 5P	PNP (LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT)
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