BD201 datasheet(2/3 Pages) COMSET

No de pièce	BD201

Description	SILCON EPITAXIAL-BASE POWER TRANSISTORS

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Fabricant	COMSET [Comset Semiconductor]

Site Internet	http://comset.halfin.com

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2 / 3 page

NPN BD201 – BD203

18/10/2012

COMSET SEMICONDUCTORS

3/3

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

ICEO

Collector Cutoff Current

VCE=30 V, IB=0V

BD201

-

0.2

mA

BD203

ICBO

Collector Cutoff Current

VCB=40 V, IE=0V

Tj=150°C

BD201

-

1

mA

BD203

IEBO

Emitter Cutoff Current

VBE=5 V, IC=0

BD201

-

0.5

mA

BD203

VCBO

Collector-Base Breakdown

Voltage

IC=1 m A, IE= 0

BD201

60

-

V

BD203

VCEO

Collector Emitter

Breakdown Voltage (*)

IC=200 m A, IB= 0

BD201

45

-

V

BD203

60

-

VEBO

Emitter Base Breakdown

Voltage

IE =1 mA, IC =0

BD201

5

-

V

BD203

VCE(SAT)

Collector-Emitter saturation

Voltage (*)

IC=3 A, IB=300 mA

BD201

-

1

V

BD203

IC=6 A, IB=600 mA

BD201

-

1.5

BD203

VBE(SAT)

Base-Emitter saturation

Voltage (*)

IC=6 A, IB=600 mA

BD201

-

2

BD203

VBE

Base Emitter Voltage (*)

IC=3 A, VCE=2 V

BD201

-

1.5

V

BD203

hFE

DC Current Gain (*)

IC=3 A, VCE=2 V

BD201

30

-

IC=2 A, VCE=2 V

BD203

30

-

fhfe

Cut-off frequency

IC=300 mA, VCE=3 V

BD201

25

-

KHz

BD203

fT

Transition frequency

IC=300 mA, VCE=3 V

f= 1MHz

BD201

7

-

MHz

BD203

Is/b

Forward bias second

breakdown collector

current

VCE=40 V,tp= 0.1 s

Tamb= 25 °C

BD201

1.5

-

A

BD203

hFE1/hFE2

DC current gain

IC=1 A, VCE=2 V

BD201

2.5

-

BD203

ton

Turn-on time

ICon=2 A

IBon = -IBoff =200 mA

BD201

-

1

µs

BD203

Toff

Turn-off time

BD201

-

4

BD203

(*) Pulse conditions : tp < 300

µs, δ =2%

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