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KA5M0365R Fiches technique(PDF) 4 Page - Fairchild Semiconductor

No de pièce KA5M0365R
Description  Fairchild Power Switch(FPS)
Download  20 Pages
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

KA5M0365R Fiches technique(HTML) 4 Page - Fairchild Semiconductor

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KA5X03XX-SERIES
4
Electrical Characteristics (SenseFET Part)
(Ta = 25
°C unless otherwise specified)
Note:
1. Pulse test: Pulse width
≤ 300µS, duty ≤ 2%
2.
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
KA5H0365R, KA5M0365R, KA5L0365R
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=50
µA
650
-
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=Max. Rating, VGS=0V
-
-
50
µA
VDS=0.8Max. Rating,
VGS=0V, TC=125
°C
-
-
200
µA
Static Drain-Source on Resistance (Note)
RDS(ON)
VGS=10V, ID=0.5A
-
3.6
4.5
Forward Transconductance (Note)
gfs
VDS=50V, ID=0.5A
2.0
-
-
S
Input Capacitance
Ciss
VGS=0V, VDS=25V,
f=1MHz
-
720
-
pF
Output Capacitance
Coss
-
40
-
Reverse Transfer Capacitance
Crss
-
40
-
Turn On Delay Time
td(on)
VDD=0.5BVDSS, ID=1.0A
(MOSFET switching
time is essentially
independent of
operating temperature)
-
150
-
nS
Rise Time
tr
-
100
-
Turn Off Delay Time
td(off)
-
150
-
Fall Time
tf
-
42
-
Total Gate Charge
(Gate-Source+Gate-Drain)
Qg
VGS=10V, ID=1.0A,
VDS=0.5BVDSS (MOSFET
switching time is essentially
independent of
operating temperature)
--
34
nC
Gate-Source Charge
Qgs
-
7.3
-
Gate-Drain (Miller) Charge
Qgd
-
13.3
-
KA5H0380R, KA5M0380R, KA5L0380R
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=50
µA
800
-
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=Max. Rating, VGS=0V
-
-
250
µA
VDS=0.8Max. Rating,
VGS=0V, TC=125
°C
-
-
1000
µA
Static Drain-Source on Resistance (Note)
RDS(ON)
VGS=10V, ID=0.5A
-
4.0
5.0
Forward Transconductance (Note)
gfs
VDS=50V, ID=0.5A
1.5
2.5
-
S
Input Capacitance
Ciss
VGS=0V, VDS=25V,
f=1MHz
-
779
-
pF
Output Capacitance
Coss
-
75.6
-
Reverse Transfer Capacitance
Crss
-
24.9
-
Turn On Delay Time
td(on)
VDD=0.5BVDSS, ID=1.0A
(MOSFET switching
time is essentially
independent of
operating temperature)
-40-
nS
Rise Time
tr
-
95
-
Turn Off Delay Time
td(off)
-
150
-
Fall Time
tf
-
60
-
Total Gate Charge
(Gate-Source+Gate-Drain)
Qg
VGS=10V, ID=1.0A,
VDS=0.5BVDSS (MOSFET
switching time is
essentially independent of
operating temperature)
--
34
nC
Gate-Source Charge
Qgs
-
7.2
-
Gate-Drain (Miller) Charge
Qgd
-
12.1
-
S
1
R
----
=


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