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BCY78 Fiches technique(PDF) 2 Page - Comset Semiconductor |
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BCY78 Fiches technique(HTML) 2 Page - Comset Semiconductor |
2 / 4 page PNP BCY78 – BCY79 18/10/2012 COMSET SEMICONDUCTORS 2/4 ELECTRICAL CHARACTERISTICS Tj=25°C unless otherwise specified Symbol Ratings Test Condition(s) Min Typ Max Unit ICES Collector Cutoff Current VCB =-35 V, VBE =0V BCY79 - - -20 nA VCB =-25 V, VB =0V BCY78 ICES Collector Cutoff Current VCB =-35 V VBE =0V,Tj =150°C BCY79 - - -10 µA VCB =-25 V VBE =0V,Tj =150°C BCY78 IEBO Emitter Cutoff Current VBE =-4.0 V, IC =0 BCY79 - - -20 nA BCY78 VCEO Collector Emitter Breakdown Voltage IC =-2 mA, IB =0 BCY79 -45 - - V BCY78 -32 - - VEBO Emitter Base Breakdown Voltage IE =-1µA, IC =0 BCY79 -5 - - V BCY78 VCE(SAT) Collector-Emitter saturation Voltage IC =-10 mA IB =-0.25 mA BCY79 - -0.12 -0.25 V BCY78 IC =-100 mA IB =-2.5 mA BCY79 - -04 -08 BCY78 VBE(SAT) Base-Emitter Saturation Voltage IC =-10 mA I B=-0.25 mA BCY79 -0.6 -0.7 -0.85 BCY78 IC =-100 mA IB =-2.5 mA BCY79 -0.7 -0.85 -1.2 BCY78 VBE Base-Emitter Voltage IC =-10 µA VCE =-5 V BCY79 - -0.55 - V BCY78 IC =-2 mA VCE =-5 V BCY79 -0.6 -0.65 -0.75 BCY78 IC =-10 mA VCE =-1 V BCY79 - -0.68 - BCY78 IC =-100 mA VCE =-1 V BCY79 - -0.75 - BCY78 Symbol Ratings Test Condition(s) BCY79VII BCY79VIII BCY79IX BCY79X BCY78VII BCY78VIII BCY78IX BCY78X hFE DC Current Gain IC =-10 µA, VCE =-5 V - >30 >40 >100 Typ.140 Typ.200 Typ.270 Typ.390 IC =-2 mA, VCE =-5 V >120 >180 >250 >380 <220 <310 <460 <630 IC =-10 mA, VCE =-1 V >80 >120 >160 >240 - <400 <630 <1000 IC =-100 mA, VCE =-1 V >40 >45 >60 >60 hfe Small-Signal Current Gain IC =2 mA, VC E=5 V f = 1kHz >125 >175 >250 >350 <250 <350 <500 <700 |
Numéro de pièce similaire - BCY78_12 |
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Description similaire - BCY78_12 |
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