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KA5Q0765 Fiches technique(PDF) 5 Page - Fairchild Semiconductor |
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KA5Q0765 Fiches technique(HTML) 5 Page - Fairchild Semiconductor |
5 / 16 page KA5Q-SERIES 5 Absolute Maximum Ratings (SFET Part) (Ta=25 °C, unless otherwise specified) Note: 1. Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2% Characteristic Symbol Test condition Min. Typ. Max. Unit KA5Q1565RF Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=50 µA 650 - - V Zero Gate Voltage Drain Current IDSS VDS=Max., Rating, VGS=0V - - 200 µA VDS=0.8Max., Rating, VGS=0V, TC=85 °C - - 300 µA Static Drain-Source on Resistance (Note) RDS(ON) VGS=10V, ID=7.3A - 0.5 0.65 W Input Capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 2580 - pF Output Capacitance Coss - 270 - Reverse Transfer Capacitance Crss - 50 - Turn on Delay Time td(on) VDD=0.5BVDSS, ID=14.6A (MOSFET switching time are essentially independent of operating temperature) -50- nS Rise Time tr - 155 - Turn Off Delay Time td(off) - 270 - Fall Time tf - 125 - Total Gate Charge (Gate-Source+Gate-Drain) Qg VGS=10V, ID=14.6A, VDS=0.8BVDSS (MOSFET switching time are essentially independent of operating temperature) -90 117 nC Gate-Source Charge Qgs - 15 - Gate-Drain (Miller) Charge Qgd - 45 - |
Numéro de pièce similaire - KA5Q0765 |
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Description similaire - KA5Q0765 |
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