Moteur de recherche de fiches techniques de composants électroniques |
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BC817-40 Fiches technique(PDF) 2 Page - STMicroelectronics |
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BC817-40 Fiches technique(HTML) 2 Page - STMicroelectronics |
2 / 4 page Obsolete Product(s) - Obsolete Product(s) THERMAL DATA Rthj-amb • Thermal Resistance Junction-Ambient Max 500 oC/W • Device mounted on a PCB area of 1 cm2 ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off Current (IE = 0) VCB = 20 V VCB = 20 V TC = 150 oC 100 5 nA µA IEBO Emitter Cut-off Current (IE = 0) VEB = 5 V 100 nA V(BR)CEO ∗ Collector-Emitter Breakdown Voltage (IB = 0) IC = 10 mA 45 V VCE(sat) ∗ Collector-Emitter Saturation Voltage IC = 500 mA IB = 50 mA 0.7 V VBE(on) ∗ Base-Emitter On Voltage IC = 500 mA VCE = 1 V 1.2 V hFE ∗ DC Current Gain IC = 100 mA VCE = 1 V for BC817-25 for BC817-40 160 250 400 600 fT Transition Frequency IC = 10 mA VCE = 5 V f =100 MHz 100 MHz CCBO Collector-Base Capacitance IE = 0 VCB = 10 V f = 1 MHz 8 pF ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % BC817-25 / BC817-40 2/4 |
Numéro de pièce similaire - BC817-40 |
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Description similaire - BC817-40 |
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