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IRF624 Fiches technique(PDF) 4 Page - Fairchild Semiconductor |
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IRF624 Fiches technique(HTML) 4 Page - Fairchild Semiconductor |
4 / 10 page ©2001 Fairchild Semiconductor Corporation Rev. A, November 2001 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 100 µs 1 ms DC 100 ms 10 ms Operation in This Area is Limited by R DS(on) ※ Notes : 1. T C = 25 o C 2. T J = 150 o C 3. Single Pulse V DS, Drain-Source Voltage [V] 25 50 75 100 125 150 0 1 2 3 4 5 T C, Case Temperature [ ℃] 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 10 2 100 µs 1 ms DC 10 ms Operation in This Area is Limited by R DS(on) ※ Notes : 1. T C = 25 o C 2. T J = 150 o C 3. Single Pulse V DS, Drain-Source Voltage [V] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ※ Notes : 1. V GS = 10 V 2. I D = 2.05 A T J, Junction Temperature [ o C] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 ※Notes: 1. V GS = 0 V 2. I D = 250 μ A T J, Junction Temperature [ o C] Typical Characteristics (Continued) Figure 9-1. Maximum Safe Operating Area for IRF624B Figure 10. Maximum Drain Current vs Case Temperature Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature Figure 9-2. Maximum Safe Operating Area for IRFS624B |
Numéro de pièce similaire - IRF624 |
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Description similaire - IRF624 |
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