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HUFA75429D3ST Fiches technique(PDF) 5 Page - Fairchild Semiconductor |
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HUFA75429D3ST Fiches technique(HTML) 5 Page - Fairchild Semiconductor |
5 / 11 page ©2002 Fairchild Semiconductor Corporation Rev. A Figure 11. Normalized Drain to Source Breakdown Voltage vs Junction Temperature Figure 12. Capacitance vs Drain to Source Voltage Figure 13. Gate Charge Waveforms for Constant Gate Currents Typical Characteristics T A = 25°C unless otherwise noted 0.9 1.0 1.1 1.2 -80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE ( oC) ID = 250µA 100 1000 0.1 1 10 50 3000 60 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 0V, f = 1MHz CISS = CGS + CGD COSS ≅ CDS + CGD CRSS = CGD 0 2 4 6 8 10 010 20 30 40 Qg, GATE CHARGE (nC) VDD = 30V ID = 20A ID = 4A WAVEFORMS IN DESCENDING ORDER: Test Circuits and Waveforms Figure 14. Unclamped Energy Test Circuit Figure 15. Unclamped Energy Waveforms tP VGS 0.01 Ω L IAS + - VDS VDD RG DUT VARY tP TO OBTAIN REQUIRED PEAK IAS 0V VDD VDS BVDSS tP IAS tAV 0 |
Numéro de pièce similaire - HUFA75429D3ST |
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