SIA417DJ datasheet(3/7 Pages) VISHAY

No de pièce	SIA417DJ

Description	P-Channel 8-V (D-S) MOSFET

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Fabricant	VISHAY [Vishay Siliconix]

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3 / 7 page

Document Number: 74637

S-80437-Rev. B, 03-Mar-08

www.vishay.com

3

Vishay Siliconix

SiA417DJ

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0

5

10

15

20

25

30

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VDS - Drain-to-Source Voltage (V)

VGS = 5 V thru 2 V

VGS = 1 V

VGS = 1.5 V

0.00

0.02

0.04

0.06

0.08

0.10

0.12

0

5

10

15

20

25

30

I D - Drain Current (A)

VGS = 4.5 V

VGS = 2.5 V

VGS = 1.2 V

VGS = 1.5 V

VGS = 1.8 V

ID = 10 A

0

1

2

3

4

5

0

5

10

15

20

25

Qg - Total Gate Charge (nC)

VDS = 4 V

VDS = 6.4 V

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

VGS - Gate-to-Source Voltage (V)

0

2

4

6

8

10

0.0

0.3

0.6

0.9

1.2

1.5

TC = 25 °C

TC = 125 °C

TC = - 55 °C

Coss

Crss

VDS - Drain-to-Source Voltage (V)

0

500

1000

1500

2000

2500

02

4

6

8

Ciss

TJ - Junction Temperature (°C)

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

- 50

- 25

0

25

50

75

100

125

150

ID = 7 A

VGS = 4.5 V, 2.5 V, 1.8 V, 1.5 V

Numéro de pièce similaire - SIA417DJ

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Description similaire - SIA417DJ

Fabricant	No de pièce	Fiches technique	Description
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