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SI9435BDY Fiches technique(PDF) 2 Page - Vishay Siliconix |
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SI9435BDY Fiches technique(HTML) 2 Page - Vishay Siliconix |
2 / 9 page www.vishay.com 2 Document Number: 72245 S09-0870-Rev. D, 18-May-09 Vishay Siliconix Si9435BDY Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1.0 - 3.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 30 V, VGS = 0 V - 1 µA VDS = - 30 V, VGS = 0 V, TJ = 70 °C - 5 On-State Drain Currentb ID(on) VDS ≤ - 10 V, VGS = - 10 V - 20 A VDS ≤ - 5 V, VGS = - 4.5 V - 5 Drain-Source On-State Resistanceb RDS(on) VGS = - 10 V, ID = - 5.7 A 0.033 0.042 Ω VGS = - 6 V, ID = - 5 A 0.043 0.055 VGS = - 4.5 V, ID = - 4.4 A 0.056 0.070 Forward Transconductanceb gfs VDS = - 15 V, ID = - 5.7 A 13 S Diode Forward Voltageb VSD IS = - 2.3 A, VGS = 0 V - 0.8 - 1.1 V Dynamica Total Gate Charge Qg VDS = - 15 V, VGS = - 10 V, ID = - 3.5 A 16 24 nC Gate-Source Charge Qgs 2.3 Gate-Drain Charge Qgd 4.5 Gate Resistance Rg 8.8 Ω Turn-On Delay Time td(on) VDD = - 15 V, RL = 15 Ω ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω 14 25 ns Rise Time tr 14 25 Turn-Off Delay Time td(off) 42 70 Fall Time tf 30 50 Source-Drain Reverse Recovery Time trr IF = - 1.2 A, dI/dt = 100 A/µs 30 60 |
Numéro de pièce similaire - SI9435BDY_13 |
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Description similaire - SI9435BDY_13 |
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