STB50N25M5 datasheet(6/14 Pages) STMICROELECTRONICS

No de pièce	STB50N25M5

Description	N-channel 250 V, 0.065 廓, 28 A, MDmesh V Power MOSFET in DPAK package

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Electrical characteristics

STB50N25M5

6/14

Doc ID 15923 Rev 3

2.1

Electrical characteristics (curves)

Figure 2.

Safe operating area

Figure 3.

Thermal impedance

Figure 4.

Output characteristics

Figure 5.

Transfer characteristics

Figure 6.

Normalized BVDSS vs temperature

Figure 7.

Static drain-source on-resistance

ID

100

10

1

0.1

1

100

VDS(V)

10

(A)

10µs

100µs

1ms

10ms

Tj=150°C

Tc=25°C

Sinlge

pulse

AM03968v1

ID

30

20

10

0

10

VDS(V)

20

(A)

5

15

25

40

50

5V

6V

7V

VGS=10V

30

AM03969v1

ID

30

20

10

0

4

VGS(V)

8

(A)

2

6

10

40

50

VDS=20V

AM03970v1

VDS

-50

0

TJ(°C)

(norm)

-25

75

25

50

100

0.92

0.94

0.96

0.98

1.00

1.04

1.06

1.02

ID = 1mA

1.08

AM10399v1

RDS(on)

0.070

0.065

0.060

0.055

0

10

ID(A)

(

Ω)

5

25

15

20

VGS=10V

AM03972v1

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