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BAT54AW Fiches technique(PDF) 3 Page - NXP Semiconductors

No de pièce BAT54AW
Description  Planar Schottky barrier diodes with an integrated guard ring for stress protection, encapsulated in a very small SOT323
Download  11 Pages
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Fabricant  NXP [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo NXP - NXP Semiconductors

BAT54AW Fiches technique(HTML) 3 Page - NXP Semiconductors

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BAT54W_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 20 November 2012
3 of 11
NXP Semiconductors
BAT54W series
Schottky barrier diodes
5.
Limiting values
[1]
Tj =25 C before surge.
[2]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6.
Thermal characteristics
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per diode
VR
reverse voltage
-
30
V
IF
forward current
-
200
mA
IFRM
repetitive peak forward
current
tp  1s;  0.5
300
mA
IFSM
non-repetitive peak
forward current
square wave;
tp <10ms
[1] -600
mA
Per device; one diode loaded
Ptot
total power dissipation
Tamb  25 C
[2] -200
mW
Tj
junction temperature
-
150
C
Tamb
ambient temperature
55
+150
C
Tstg
storage temperature
65
+150
C
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per device; one diode loaded
Rth(j-a)
thermal resistance from
junction to ambient
in free air
[1] -
-
625
K/W


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