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BAS28.215 Fiches technique(PDF) 5 Page - NXP Semiconductors |
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BAS28.215 Fiches technique(HTML) 5 Page - NXP Semiconductors |
5 / 12 page BAS28 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 3 — 22 July 2010 5 of 12 NXP Semiconductors BAS28 High-speed double diode VR =VRmax (1) VR = 75 V; maximum values (2) VR = 75 V; typical values (3) VR = 25 V; typical values f=1MHz; Tj =25 °C Fig 3. Reverse current as a function of junction temperature Fig 4. Diode capacitance as a function of reverse voltage; typical values Fig 5. Forward current as a function of ambient temperature; derating curve 105 104 10 200 0 mga884 100 Tj (°C) IR (nA) 103 102 (2) (1) (3) 08 16 12 4 0.8 0.6 0 0.4 0.2 mbg446 VR (V) Cd (pF) 0 50 100 200 250 0 200 msa562 150 150 100 50 IF (mA) Tamb (°C) |
Numéro de pièce similaire - BAS28.215 |
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