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BAS28.215 Fiches technique(PDF) 5 Page - NXP Semiconductors

No de pièce BAS28.215
Description  High-speed double diode
Download  12 Pages
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Fabricant  NXP [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo NXP - NXP Semiconductors

BAS28.215 Fiches technique(HTML) 5 Page - NXP Semiconductors

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BAS28
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 22 July 2010
5 of 12
NXP Semiconductors
BAS28
High-speed double diode
VR =VRmax
(1) VR = 75 V; maximum values
(2) VR = 75 V; typical values
(3) VR = 25 V; typical values
f=1MHz; Tj =25 °C
Fig 3.
Reverse current as a function of junction
temperature
Fig 4.
Diode capacitance as a function of reverse
voltage; typical values
Fig 5.
Forward current as a function of ambient temperature; derating curve
105
104
10
200
0
mga884
100
Tj (°C)
IR
(nA)
103
102
(2)
(1)
(3)
08
16
12
4
0.8
0.6
0
0.4
0.2
mbg446
VR (V)
Cd
(pF)
0
50
100
200
250
0
200
msa562
150
150
100
50
IF
(mA)
Tamb (°C)


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