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SI2303BDS-T1-E3 Fiches technique(PDF) 2 Page - Vishay Siliconix

No de pièce SI2303BDS-T1-E3
Description  P-Channel 30-V (D-S) MOSFET
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SI2303BDS-T1-E3 Fiches technique(HTML) 2 Page - Vishay Siliconix

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Document Number: 72065
S-80642-Rev. C, 24-Mar-08
Vishay Siliconix
Si2303BDS
Notes:
a. Pulse test: PW
≤ 300 µs, duty cycle ≤ 2 %.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Limits
Unit
Min.
Typ.
Max.
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = - 10 µA
- 30
V
Gate-Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
- 1.0
- 3.0
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 30 V, VGS = 0 V
- 1
µA
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
- 10
On-State Drain Currenta
ID(on)
VDS ≤ - 5 V, VGS = - 10 V
- 6
A
Drain-Source On-Resistancea
RDS(on)
VGS = - 10 V, ID = - 1.7 A
0.150
0.200
Ω
VGS = - 4.5 V, ID = - 1.3 A
0.285
0.380
Forward Transconductancea
gfs
VDS = - 5 V, ID = - 1.7 A
2.0
S
Diode Forward Voltage
VSD
IS = - 0.75 A, VGS = 0 V
- 0.85
- 1.2
V
Dynamicb
Total Gate Charge
Qg
VDS = - 15 V, VGS = - 10 V, ID ≅ - 1.7 A
4.3
10
nC
Gate-Source Charge
Qgs
0.8
Gate-Drain Charge
Qgd
1.3
Input Capacitance
Ciss
VDS = - 15 V, VGS = 0 V, f = 1 MHz
180
pF
Output Capacitance
Coss
50
Reverse Transfer Capacitance
Crss
35
Switchingc
Turn-On Time
td(on)
VDD = - 15 V, RL = 15 Ω
ID ≅ - 1.0 A, VGEN = - 4.5 V
RG = 6 Ω
55
80
ns
tr
40
60
Turn-Off Time
td(off)
10
20
tf
10
20


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