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SI2303BDS-T1-E3 Fiches technique(PDF) 2 Page - Vishay Siliconix |
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SI2303BDS-T1-E3 Fiches technique(HTML) 2 Page - Vishay Siliconix |
2 / 9 page www.vishay.com 2 Document Number: 72065 S-80642-Rev. C, 24-Mar-08 Vishay Siliconix Si2303BDS Notes: a. Pulse test: PW ≤ 300 µs, duty cycle ≤ 2 %. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Limits Unit Min. Typ. Max. Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = - 10 µA - 30 V Gate-Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1.0 - 3.0 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 30 V, VGS = 0 V - 1 µA VDS = - 30 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta ID(on) VDS ≤ - 5 V, VGS = - 10 V - 6 A Drain-Source On-Resistancea RDS(on) VGS = - 10 V, ID = - 1.7 A 0.150 0.200 Ω VGS = - 4.5 V, ID = - 1.3 A 0.285 0.380 Forward Transconductancea gfs VDS = - 5 V, ID = - 1.7 A 2.0 S Diode Forward Voltage VSD IS = - 0.75 A, VGS = 0 V - 0.85 - 1.2 V Dynamicb Total Gate Charge Qg VDS = - 15 V, VGS = - 10 V, ID ≅ - 1.7 A 4.3 10 nC Gate-Source Charge Qgs 0.8 Gate-Drain Charge Qgd 1.3 Input Capacitance Ciss VDS = - 15 V, VGS = 0 V, f = 1 MHz 180 pF Output Capacitance Coss 50 Reverse Transfer Capacitance Crss 35 Switchingc Turn-On Time td(on) VDD = - 15 V, RL = 15 Ω ID ≅ - 1.0 A, VGEN = - 4.5 V RG = 6 Ω 55 80 ns tr 40 60 Turn-Off Time td(off) 10 20 tf 10 20 |
Numéro de pièce similaire - SI2303BDS-T1-E3 |
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Description similaire - SI2303BDS-T1-E3 |
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