IRF7307TRPBF datasheet(3/10 Pages) IRF

No de pièce	IRF7307TRPBF

Description	HEXFET짰 Power MOSFET

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Fabricant	IRF [International Rectifier]

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IRF7307PbF

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 3. Typical Transfer Characteristics

1

10

100

1000

0.1

1

10

100

V

, Drain-to-Source Voltage (V)

DS

20µs PULSE WIDTH

T = 25°C

A

VGS

TOP

7.5V

5.0V

4.0V

3.5V

3.0V

2.5V

2.0V

BOTTOM 1.5V

1.5V

J

1

10

100

1000

0.1

1

10

100

V

, Drain-to-Source Voltage (V)

DS

A

VGS

TOP

7.5V

5.0V

4.0V

3.5V

3.0V

2.5V

2.0V

BOTTOM 1.5V

1.5V

20µs PULSE WIDTH

T = 150°C

J

1

10

100

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

T = 25°C

T = 150°C

J

GS

V

, Gate-to-Source Voltage (V)

A

V

= 15V

20µs PULSE WIDTH

DS

0.0

0.5

1.0

1.5

2.0

-60 -40 -20

0

20

40

60

80 100 120 140 160

J

T , Junction Temperature (°C)

A

V

= 4.5V

GS

I = 4.3A

D

0

300

600

900

1200

1

10

100

DS

V

, Drain-to-Source Voltage (V)

A

V

= 0V,

f = 1MHz

C

= C

+ C

, C

SHORTED

C

= C

C

= C

+ C

GS

iss

gs

gd

ds

rss

gd

oss

ds

gd

Ciss

Coss

Crss

0

2

4

6

8

10

0

5

10

15

20

25

Q , Total Gate Charge (nC)

G

A

I = 2.6A

V

= 16V

D

DS

FOR TEST CIRCUIT

SEE FIGURE 11

N-Channel

Numéro de pièce similaire - IRF7307TRPBF

Fabricant	No de pièce	Fiches technique	Description
Guangdong Youtai Semico...	IRF7307TR	491Kb / 9P	Generation V Technology Ultra

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