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MRF275G Datasheet(Fiches technique) 2 Page - Motorola, Inc

Numéro de pièce MRF275G
Description  150 W, 28 V, 500 MHz N.CHANNEL MOS BROADBAND 100 - 500 MHz RF POWER FET
Télécharger  12 Pages
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Fabricant  MOTOROLA [Motorola, Inc]
Site Internet  http://www.freescale.com
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MRF275G
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS (1)
Drain–Source Breakdown Voltage
(VGS = 0, ID = 50 mA)
V(BR)DSS
65
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 V, VGS = 0)
IDSS
1
mA
Gate–Source Leakage Current
(VGS = 20 V, VDS = 0)
IGSS
1
µA
ON CHARACTERISTICS (1)
Gate Threshold Voltage (VDS = 10 V, ID = 100 mA)
VGS(th)
1.5
2.5
4.5
Vdc
Drain–Source On–Voltage (VGS = 10 V, ID = 5 A)
VDS(on)
0.5
0.9
1.5
Vdc
Forward Transconductance (VDS = 10 V, ID = 2.5 A)
gfs
3
3.75
mhos
DYNAMIC CHARACTERISTICS (1)
Input Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz)
Ciss
135
pF
Output Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz)
Coss
140
pF
Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz)
Crss
17
pF
FUNCTIONAL CHARACTERISTICS (2) (Figure 1)
Common Source Power Gain
(VDD = 28 V, Pout = 150 W, f = 500 MHz, IDQ = 2 x 100 mA)
Gps
10
11.2
dB
Drain Efficiency
(VDD = 28 V, Pout = 150 W, f = 500 MHz, IDQ = 2 x 100 mA)
η
50
55
%
Electrical Ruggedness
(VDD = 28 V, Pout = 150 W, f = 500 MHz, IDQ = 2 x 100 mA,
VSWR 30:1 at all Phase Angles)
ψ
No Degradation in Output Power
(1.) Each side of device measured separately.
(2.) Measured in push–pull configuration.




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