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MRF275G Datasheet(Fiches technique) 1 Page - Motorola, Inc

Numéro de pièce MRF275G
Description  150 W, 28 V, 500 MHz N.CHANNEL MOS BROADBAND 100 - 500 MHz RF POWER FET
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Fabricant  MOTOROLA [Motorola, Inc]
Site Internet  http://www.freescale.com
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MRF275G
MOTOROLA RF DEVICE DATA
The RF MOSFET Line
Power Field-Effect Transistor
N–Channel Enhancement–Mode
Designed primarily for wideband large–signal output and driver stages from
100 – 500 MHz.
• Guaranteed Performance @ 500 MHz, 28 Vdc
Output Power — 150 Watts
Power Gain — 10 dB (Min)
Efficiency — 50% (Min)
100% Tested for Load Mismatch at all Phase Angles with VSWR 30:1
• Overall Lower Capacitance @ 28 V
Ciss — 135 pF
Coss — 140 pF
Crss — 17 pF
• Simplified AVC, ALC and Modulation
Typical data for power amplifiers in industrial and
commercial applications:
• Typical Performance @ 400 MHz, 28 Vdc
Output Power — 150 Watts
Power Gain — 12.5 dB
Efficiency — 60%
• Typical Performance @ 225 MHz, 28 Vdc
Output Power — 200 Watts
Power Gain — 15 dB
Efficiency — 65%
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
65
Vdc
Drain–Gate Voltage
(RGS = 1.0 MΩ)
VDGR
65
Vdc
Gate–Source Voltage
VGS
±40
Adc
Drain Current — Continuous
ID
26
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
400
2.27
Watts
W/
°C
Storage Temperature Range
Tstg
– 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
0.44
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF275G/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
150 W, 28 V, 500 MHz
N–CHANNEL MOS
BROADBAND
100 – 500 MHz
RF POWER FET
CASE 375–04, STYLE 2
MRF275G
© Motorola, Inc. 1997
D
G
S
(FLANGE)
D
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