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2N5061RLRAG Fiches technique(PDF) 2 Page - ON Semiconductor |
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2N5061RLRAG Fiches technique(HTML) 2 Page - ON Semiconductor |
2 / 7 page 2N5060 Series http://onsemi.com 2 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit *Thermal Resistance, Junction−to−Case (Note 2) RqJC 75 °C/W Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W 2. This measurement is made with the case mounted “flat side down” on a heatsink and held in position by means of a metal clamp over the curved surface. *Indicates JEDEC Registered Data. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS *Peak Repetitive Forward or Reverse Blocking Current (Note 3) (VAK = Rated VDRM or VRRM)TC = 25°C TC = 110°C IDRM, IRRM − − − − 10 50 mA mA ON CHARACTERISTICS *Peak Forward On−State Voltage (Note 4) (ITM = 1.2 A peak @ TA = 25°C) VTM − − 1.7 V Gate Trigger Current (Continuous DC) (Note 5) *(VAK = 7.0 Vdc, RL = 100 W)TC = 25°C TC = −40°C IGT − − − − 200 350 mA Gate Trigger Voltage (Continuous DC) (Note 5) TC = 25°C *(VAK = 7.0 Vdc, RL = 100 W)TC = −40°C VGT − − − − 0.8 1.2 V *Gate Non−Trigger Voltage (VAK = Rated VDRM, RL = 100 W)TC = 110°C VGD 0.1 − − V Holding Current (Note 3) TC = 25°C *(VAK = 7.0 Vdc, initiating current = 20 mA) TC = −40°C IH − − − − 5.0 10 mA Turn-On Time Delay Time Rise Time (IGT = 1.0 mA, VD = Rated VDRM, Forward Current = 1.0 A, di/dt = 6.0 A/ms td tr − − 3.0 0.2 − − ms Turn-Off Time (Forward Current = 1.0 A pulse, Pulse Width = 50 ms, 0.1% Duty Cycle, di/dt = 6.0 A/ms, dv/dt = 20 V/ms, IGT = 1 mA) 2N5060, 2N5061 2N5062, 2N5064 tq − − 10 30 − − ms DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off−State Voltage (Rated VDRM, Exponential, RGK = 1 kW) dv/dt − 30 − V/ms *Indicates JEDEC Registered Data. 3. RGK = 1000 W is included in measurement. 4. Forward current applied for 1 ms maximum duration, duty cycle p 1%. 5. RGK current is not included in measurement. |
Numéro de pièce similaire - 2N5061RLRAG |
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Description similaire - 2N5061RLRAG |
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