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FQPF3N80 Fiches technique(PDF) 4 Page - Fairchild Semiconductor

No de pièce FQPF3N80
Description  800V N-Channel MOSFET
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQPF3N80 Fiches technique(HTML) 4 Page - Fairchild Semiconductor

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©2000 Fairchild Semiconductor International
Rev. A, September 2000
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
※ N o te s :
1 . Z
θ JC (t) = 3 . 2
℃ /W M a x .
2 . D u ty F a c t o r , D = t
1 /t 2
3 . T
JM
- T
C
= P
DM
* Z
θ JC (t)
s ing le pu ls e
D= 0 . 5
0. 0 2
0. 2
0. 0 5
0. 1
0. 0 1
t
1 , S q u a r e
W a v e P u ls e D u r a tio n [s e c ]
25
50
75
100
125
150
0.0
0.4
0.8
1.2
1.6
2.0
T
C, Case Temperature [
℃]
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
100 ms
DC
10 ms
1 ms
100μs
Operation in This Area
is Limited by R
DS(on)
※ Notes :
1. T
C = 25
o
C
2. T
J = 150
o
C
3. Single Pulse
V
DS, Drain-Source Voltage [V]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
※ Notes :
1. V
GS = 10 V
2. I
D = 1.5 A
T
J, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
※ Notes :
1. V
GS = 0 V
2. I
D
= 250 μA
T
J, Junction Temperature [
o
C]
Typical Characteristics (Continued)
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
Figure 11. Transient Thermal Response Curve
t
1
PDM
t
2


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