FQPF12N60 datasheet(3/8 Pages) FAIRCHILD

No de pièce	FQPF12N60

Description	600V N-Channel MOSFET

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Fabricant	FAIRCHILD [Fairchild Semiconductor]

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FQP12N60C / FQPF12N60C Rev. B1

Typical Performance Characteristics

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs.

Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage

Variation vs. Source Current

and Temperatue

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

10

0

10

1

10

0

10

1

V

GS

Top :

15.0 V

10.0V

8.0V

7.0V

6.0V

5.5V

5.0V

Bottom: 4.5 V

Notes :

※

1. 250µs Pulse Test

2. T

C = 25℃

V

DS, Drain-Source Voltage [V]

24

68

10

-1

10

0

10

1

150

oC

25

oC

-55

oC

Notes :

※

1. V

DS = 40V

2. 250µs Pulse Test

V

GS, Gate-Source Voltage [V]

0

5

10

15

20

25

30

35

0.5

1.0

1.5

V

GS = 20V

V

GS = 10V

Note: T

※

J = 25

℃

I

D, Drain Current [A]

0.2

0.4

0.6

0.8

1.0

1.2

1.4

10

-1

10

0

10

1

150℃

Notes :

※

1. V

GS = 0V

2. 250µs Pulse Test

25℃

V

SD, Source-Drain voltage [V]

10

-1

10

0

10

1

0

500

1000

1500

2000

2500

3000

3500

C

iss = Cgs + Cgd (Cds = shorted)

C

oss = Cds + Cgd

C

rss = Cgd

Notes ;

※

1. V

GS = 0 V

2. f =1MHz

C

rss

C

oss

C

iss

V

DS, Drain-Source Voltage [V]

0

10

20304050

0

2

4

6

8

10

12

V

DS = 300V

V

DS = 120V

V

DS = 480V

Note : I

※

D = 12A

Q

G, Total Gate Charge [nC]

Numéro de pièce similaire - FQPF12N60

Fabricant	No de pièce	Fiches technique	Description
Fairchild Semiconductor	FQPF12N60	1Mb / 10P	600V N-Channel MOSFET
	FQPF12N60C	873Kb / 10P	FQP12N60C/FQPF12N60C
	FQPF12N60C	1Mb / 10P	600V N-Channel MOSFET
Kersemi Electronic Co.,...	FQPF12N60C	1Mb / 9P	600V N-Channel MOSFET
Fairchild Semiconductor	FQPF12N60C	1Mb / 10P	600V N-Channel MOSFET

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