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FQP6N60 Fiches technique(PDF) 3 Page - Fairchild Semiconductor |
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FQP6N60 Fiches technique(HTML) 3 Page - Fairchild Semiconductor |
3 / 8 page ©2000 Fairchild Semiconductor International Rev. A, April 2000 0 3 6 9 12 15 18 21 0 2 4 6 8 10 12 V DS = 300V V DS = 120V V DS = 480V Note : I D = 6.2 A Q G, Total Gate Charge [nC] 10 -1 10 0 10 1 0 200 400 600 800 1000 1200 1400 C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd Notes : 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss V DS, Drain-Source Voltage [V] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -1 10 0 10 1 25 150 Notes : 1. V GS = 0V 2. 250 s PulseTest V SD , Source-Drain Voltage [V] 0 2 4 6 8 10121416 0 1 2 3 4 5 V GS = 20V V GS = 10V Note : T J = 25 I D, Drain Current [A] 2468 10 10 -1 10 0 10 1 Notes : 1. V DS = 50V 2. 250 s Pulse Test -55 150 25 V GS , Gate-Source Voltage [V] 10 -1 10 0 10 1 10 -1 10 0 10 1 Notes : 1. 250 s PulseTest 2. T C = 25 V GS Top : 15 V 10 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V V DS , Drain-Source Voltage [V] Typical Characteristics Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Figure 2. Transfer Characteristics Figure 1. On-Region Characteristics |
Numéro de pièce similaire - FQP6N60 |
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Description similaire - FQP6N60 |
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