1

MRF154

MOTOROLA RF DEVICE DATA

The RF MOSFET Line

RF Power Field Effect Transistor

N–Channel Enhancement–Mode MOSFET

Designed primarily for linear large–signal output stages in the 2.0 – 100 MHz

frequency range.

• Specified 50 Volts, 30 MHz Characteristics

Output Power = 600 Watts

Power Gain = 17 dB (Typ)

Efficiency = 45% (Typ)

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain–Source Voltage

VDSS

125

Vdc

Drain–Gate Voltage

VDGO

125

Vdc

Gate–Source Voltage

VGS

±40

Vdc

Drain Current — Continuous

ID

60

Adc

Total Device Dissipation @ TC = 25°C

Derate above 25

°C

PD

1350

7.7

Watts

W/

°C

Storage Temperature Range

Tstg

– 65 to +150

°C

Operating Junction Temperature

TJ

200

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

0.13

°C/W

Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

Order this document

by MRF154/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MRF154

600 W, 50 V, 80 MHz

N–CHANNEL

BROADBAND

RF POWER MOSFET

CASE 368–03, STYLE 2

(HOG PAC)

D

G

S

REV 2