STI32N65M5 datasheet(8/22 Pages) STMICROELECTRONICS

No de pièce	STI32N65M5

Description	N-channel 650 V, 0.095 廓, 24 A, MDmesh??V Power MOSFET in D짼PAK, I짼PAK, TO-220FP, TO-220, TO-247

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Electrical characteristics

STB/F/I/P/W32N65M5

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Doc ID 15316 Rev 4

Figure 14.

Normalized gate threshold voltage

vs temperature

Figure 15.

Normalized on resistance vs

temperature

Figure 16.

Source-drain diode forward

characteristics

Figure 17.

Normalized BVDSS vs temperature

Figure 18.

Switching losses vs gate resistance

(1)

1.

Eon including reverse recovery of a SiC diode

VGS(th)

1.00

0.90

0.80

0.70

-50

0

TJ(°C)

(norm)

-25

1.10

75

25

50

100

AM05459v1

RDS(on)

1.7

1.3

0.9

0.5

-50

0

TJ(°C)

(norm)

-25

75

25

50

100

0.7

1.1

1.5

1.9

2.1

AM05460v1

VSD

0

20

ISD(A)

(V)

10

50

30

40

0

0.2

0.4

0.6

0.8

1.0

1.2

TJ=-50°C

TJ=150°C

TJ=25°C

AM05461v1

BVDSS

-50

0

TJ(°C)

(norm)

-25

75

25

50

100

0.93

0.95

0.97

0.99

1.01

1.03

1.05

1.07

150

AM05453v1

E

200

100

0

20

RG(

Ω)

(

μJ)

10

30

40

ID=15A

VCL=400V

Eon

Eoff

VGS=10V

400

300

AM05458v1

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