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FQD7P06 Fiches technique(PDF) 1 Page - Fairchild Semiconductor

No de pièce FQD7P06
Description  60V P-Channel MOSFET
Download  9 Pages
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQD7P06 Fiches technique(HTML) 1 Page - Fairchild Semiconductor

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May 2001
QFETTM
©2001 Fairchild Semiconductor Corporation
Rev. A2. May 2001
FQD7P06 / FQU7P06
60V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
well suited for low voltage applications such as automotive,
DC/DC converters, and high efficiency switching for power
management in portable and battery operated products.
Features
• -5.4A, -60V, RDS(on) = 0.45Ω @VGS = -10 V
• Low gate charge ( typical 6.3 nC)
• Low Crss ( typical 25 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings T
C = 25°C unless otherwise noted
Thermal Characteristics
Symbol
Parameter
FQD7P06 / FQU7P06
Units
VDSS
Drain-Source Voltage
-60
V
ID
Drain Current
- Continuous (TC = 25°C)
-5.4
A
- Continuous (TC = 100°C)
-3.42
A
IDM
Drain Current
- Pulsed
(Note 1)
-21.6
A
VGSS
Gate-Source Voltage
± 25
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
90
mJ
IAR
Avalanche Current
(Note 1)
-5.4
A
EAR
Repetitive Avalanche Energy
(Note 1)
2.8
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
-7.0
V/ns
PD
Power Dissipation (TA = 25°C) *
2.5
W
Power Dissipation (TC = 25°C)
28
W
- Derate above 25°C
0.22
W/°C
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C
Symbol
Parameter
Typ
Max
Units
RθJC
Thermal Resistance, Junction-to-Case
--
4.5
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient *
--
50
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
--
110
°C/W
* When mounted on the minimum pad size recommended (PCB Mount)
I-PAK
FQU Series
D-PAK
FQD Series
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