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SI4435DDY-T1-GE3 Fiches technique(PDF) 3 Page - Vishay Siliconix |
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SI4435DDY-T1-GE3 Fiches technique(HTML) 3 Page - Vishay Siliconix |
3 / 10 page Document Number: 68841 S09-0863-Rev. C, 18-May-09 www.vishay.com 3 Vishay Siliconix Si4435DDY New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current Gate Charge 0 10 20 30 40 50 0.0 0.5 1.0 1.5 2.0 VGS =10 V thru 5 V VGS =3 V VGS =4 V VDS - Drain-to-Source Voltage (V) 0 0.01 0.02 0.03 0.04 0.05 0 10203040 50 VGS =10 V VGS =4.5 V ID - Drain Current (A) 0 2 4 6 8 10 09 18 27 36 VDS =22.5 V ID =9.1 A VDS =15 V VDS =7.5 V Qg - Total Gate Charge (nC) Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0.0 0.2 0.4 0.6 0.8 1.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 TC = 25 °C TC = 125 °C TC = - 55 °C VGS - Gate-to-Source Voltage (V) 0 600 1200 1800 2400 0 6 12 18 24 30 Ciss Coss Crss VDS - Drain-to-Source Voltage (V) 0.6 0.9 1.2 1.5 1.8 - 50 - 25 0 25 50 75 100 125 150 VGS =10 V VGS =4.5 V ID =9.1 A TJ -Junction Temperature (°C) |
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