SI3443DV datasheet(1/5 Pages) VISHAY

No de pièce	SI3443DV

Description	P-Channel 2.5-V (G-S) MOSFET

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Si3443DV

Vishay Siliconix

Document Number: 70713

S-54948—Rev. B, 29-Sep-97

www.vishay.com

S FaxBack 408-970-5600

2-1

P-Channel 2.5-V (G-S) MOSFET

PRODUCT SUMMARY

VDS (V)

rDS(on) (W)

ID (A)

20

0.065 @ VGS = –4.5 V

"4.4

–20

0.090 @ VGS = –2.7 V

"3.7

0.100 @ VGS = –2.5 V

"3.5

(4) S

(3) G

(1, 2, 5, 6) D

P-Channel MOSFET

TSOP-6

Top View

6

4

1

2

3

5

2.85 mm

3 mm

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

–20

V

Gate-Source Voltage

VGS

"12

V

Continuous Drain Current (TJ = 150_C)a

TA = 25_C

ID

"4.4

A

Continuous Drain Current (TJ = 150_C)a

TA = 70_C

ID

"3.5

A

Pulsed Drain Current

IDM

"20

A

Continuous Source Current (Diode Conduction)a

IS

–1.7

Maximum Power Dissipationa

TA = 25_C

PD

2.0

W

Maximum Power Dissipationa

TA = 70_C

PD

1.3

W

Operating Junction and Storage Temperature Range

TJ, Tstg

–55 to 150

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Limit

Unit

Maximum Junction-to-Ambienta

RthJA

62.5

_C/W

Notes

a.

Surface Mounted on FR4 Board, t

v 5 sec.

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