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IRFH5204TRPBF Fiches technique(PDF) 2 Page - International Rectifier |
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IRFH5204TRPBF Fiches technique(HTML) 2 Page - International Rectifier |
2 / 8 page IRFH5204PbF 2 www.irf.com S D G Thermal Resistance Parameter Typ. Max. Units RθJC (Bottom) Junction-to-Case f ––– 1.2 RθJC (Top) Junction-to-Case f ––– 15 °C/W RθJA Junction-to-Ambient g ––– 35 RθJA (<10s) Junction-to-Ambient g ––– 22 Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 40 ––– ––– V ΔΒVDSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.05 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 3.6 4.3 mΩ VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V ΔVGS(th) Gate Threshold Voltage Coefficient ––– -9.3 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 20 ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 96 ––– ––– S Qg Total Gate Charge ––– 43 65 Qgs1 Pre-Vth Gate-to-Source Charge ––– 9.1 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 4.0 ––– Qgd Gate-to-Drain Charge ––– 14 ––– Qgodr Gate Charge Overdrive ––– 16 ––– Qsw Switch Charge (Qgs2 + Qgd) ––– 18 ––– Qoss Output Charge ––– 18 ––– nC RG Gate Resistance ––– 1.7 ––– Ω td(on) Turn-On Delay Time ––– 8.4 ––– tr Rise Time ––– 14 ––– td(off) Turn-Off Delay Time ––– 18 ––– tf Fall Time ––– 8.3 ––– Ciss Input Capacitance ––– 2460 ––– Coss Output Capacitance ––– 515 ––– Crss Reverse Transfer Capacitance ––– 250 ––– Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy d mJ IAR Avalanche Current A Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) à VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 30 45 ns Qrr Reverse Recovery Charge ––– 128 192 nC ton Forward Turn-On Time Time is dominated by parasitic Inductance VDS = VGS, ID = 100μA VGS = 10V Typ. VDS = 40V, VGS = 0V VDS = 16V, VGS = 0V VDD = 20V, VGS = 10V ––– RG=1.8Ω VDS = 15V, ID = 50A VDS = 40V, VGS = 0V, TJ = 125°C μA ID = 50A ID = 50A VGS = 0V VDS = 25V TJ = 25°C, IF = 50A, VDD = 20V di/dt = 500A/μs eà TJ = 25°C, IS = 50A, VGS = 0V e showing the integral reverse p-n junction diode. Conditions Max. 102 50 ƒ = 1.0MHz Conditions VGS = 0V, ID = 250uA Reference to 25°C, ID = 1.0mA VGS = 10V, ID = 50A e ––– ––– 400 ––– ––– 100 h MOSFET symbol nA ns A pF nC VDS = 20V ––– VGS = 20V VGS = -20V |
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